MBR30H100CT, MBRF30H100CT
http://onsemi.com
6
MERCURY
SWITCH
VD
ID
DUT
10 mH COIL
+VDD
IL
S1
BVDUT
IL
ID
VDD
t0
t1
t2
t
Figure 13. Test Circuit
Figure 14. Current?Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 13 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD
power supply while the diode is in
breakdown (from t1
to t
2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1
was closed,
Equation (2).
BV
WAVAL
1
2LI
2
LPK
DUT
BVDUTV
DD
WAVAL
1
2LI
2
LPK
EQUATION (1):
EQUATION (2):
相关PDF资料
MBRF30H150CT-E3/45 DIODE SCHOT 30A 150V DUAL TO220
MBRP1545NTU DIODE SCHOTTKY 45V 15A TO-220
MBRP2045NTU DIODE SCHOTTKY 45V 20A TO-220
MBRP3010NTU DIODE SCHOTTKY 100V 30A TO-220
MBRP3045NTU DIODE SCHOTTKY 45V 30A TO-220
MCEEZW-P1-0000-0000J030H LED XLAMP MCE EASYWHITE
MD7P19130HSR5 MOSFET N-CH RF 28V 40W NI780HS-4
MF3060C-E3/4W DIODE SCHOT 30A 60V DUAL TO220
相关代理商/技术参数
MBRF30H100CTHE3/45 功能描述:肖特基二极管与整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF30H150CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF30H150CT/45 功能描述:肖特基二极管与整流器 150 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF30H150CT-E3/45 功能描述:肖特基二极管与整流器 150 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF30H150CTG 功能描述:二极管 - 通用,功率,开关 30A 150V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MBRF30H150CTG_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier
MBRF30H35CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRF30H45CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier